SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

Ω

Ω

Ω

Ω

Ω

Ω

Elektronische Bauelemente

26-Dec-2011 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate Threshold Voltage

1

-

-

V

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

1

µA

On-State Drain Current

1

20

-

-

A

Static Drain-Source On-Resistance

1

-

-

31

m

-

-

40

Forward Transconductance

1

-

25

-

S

Dynamic

Total Gate Charge

-

4.0

nC

Gate-Source Charge

-

1.1

-

Gate-Drain (“Miller”) Change

-

1.4

-

Turn-on Delay Time

-

8

-

nS

Rise Time

-

5

-

Turn-off Delay Time

-

23

-

Fall Time

-

3

-

Notes:

1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing.