SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

Ω

Ω

Ω

Ω

Ω

Ω

Elektronische Bauelemente

26-Dec-2011 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate Threshold Voltage

-1

-

-

V

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

-1

µA

On-State Drain Current

1

-20

-

-

A

Static Drain-Source On-Resistance

1

-

-

52

m

-

-

80

Forward Transconductance

1

-

10

-

S

Dynamic

Total Gate Charge

-

10

nC

Gate-Source Charge

-

2.2

-

Gate-Drain (“Miller”) Change

-

1.7

-

Turn-on Delay Time

-

10

-

nS

Rise Time

-

2.8

-

Turn-off Delay Time

-

53.6

-

Fall Time

-

46

-

Notes:

1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing.