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R5F5630ECDLK 数据表(PDF) 127 Page - Renesas Technology Corp |
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R5F5630ECDLK 数据表(HTML) 127 Page - Renesas Technology Corp |
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127 / 165 page ![]() R01DS0060EJ0100 Rev.1.00 Page 127 of 168 Sep 13, 2011 RX630 Group 5. Electrical Characteristics 5.4.1 Reset Timing Note: • Do not allow a reset by the signal on the RES# pin during programming or erasure of the ROM or E2 DataFlash memory or during blank checking of the E2 DataFlash memory. For details, see section 42.14, Usage Notes, in section 42, ROM (Flash Memory for Code Storage). Figure 5.11 Reset Input Timing at Power-On Figure 5.12 Reset Input Timing Table 5.11 Reset Timing Conditions: VCC = AVCC0 = VCC_USB = VBATT = 2.7 to 3.6 V, VREFH/VREFH0 = 2.7 V to AVCC0, VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V, Ta = Topr Item Symbol Min. Typ. Max. Unit Test Conditions RES# pulse width Power-on tRESWP 2 — — ms Figure 5.11 Deep software standby mode tRESWD 1 — — ms Figure 5.12 Software standby mode, low-speed operating mode 2 tRESWS 1— — ms Other than above (except for programming or erasure of the ROM or E2 data-flash memory or blank checking of the E2 DataFlash memory) tRESW 200 — — µs Wait time after RES# cancellation tRESWT 59 — 60 tcyc Internal reset time (independent watchdog timer reset, watchdog timer reset, software reset) tRESW2 112 — 120 tcyc VCC RES# tRESWP Internal reset tRESWT RES# Internal reset tRESWT tRESWD, tRESWS, tRESW |
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