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ZXGD3105 数据表(PDF) 5 Page - Diodes Incorporated |
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ZXGD3105 数据表(HTML) 5 Page - Diodes Incorporated |
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5 / 13 page ![]() ZXGD3105N8 Document Number DS35101 Rev. 1 – 2 5 of 13 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3105N8 Electrical Characteristics @TA = 25°C unless otherwise specified VCC = 10V; RBIAS = 18kΩ (IBIAS = 0.54mA); RREF = 9.1kΩ (IREF = 1.02mA) Characteristic Symbol Min Typ Max Unit Test Condition Input Supply Quiescent current IQ - 1.56 - mA VDRAIN ≥ 0mV Gate Driver Gate peak source current ISOURCE - 2 - A Capacitive load: CL = 20nF Gate peak sink current ISINK - 7 - Detector under DC condition Turn-off Threshold Voltage VT -20 -10 0 mV VG = 1V Capacitive load only Gate output voltage VG(off) - 0.2 0.6 V VDRAIN ≥ 1V VG 5.0 7.8 VDRAIN = -50mV 8.0 9.4 VDRAIN = -100mV Switching Performance Turn-on propagation delay td(rise) - 70 - ns Rise and fall measured 10% to 90% Refer to application test circuit below Gate rise time tr - 175 - Turn-off propagation delay td(fall) - 15 - Gate fall time tf - 20 - |
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