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ZXGD3105 数据表(PDF) 9 Page - Diodes Incorporated |
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ZXGD3105 数据表(HTML) 9 Page - Diodes Incorporated |
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9 / 13 page ![]() ZXGD3105N8 Document Number DS35101 Rev. 1 – 2 9 of 13 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3105N8 Functional descriptions The operation of the device is described step-by-step with reference to the timing diagram in Figure 2. 1. The detector stage monitors the MOSFET Drain-Source voltage. 2. When, due to transformer action, the MOSFET body diode is forced to conduct there is a negative voltage on the Drain pin due to the body diode forward voltage. 3. When the negative Drain voltage crosses the turn-off Threshold voltage VT, the detector stage outputs a positive voltage with respect to ground after the turn-on delay time td(fall). This voltage is then fed to the MOSFET driver stage and current is sourced out of the GATE pin. 4. The controller goes into proportional gate drive control — the GATE output voltage is proportional to the MOSFET on-resistance-induced Drain-Source voltage. Proportional gate drive ensures that MOSFET conducts during majority of the conduction cycle to minimize power loss in the body diode. 5. As the Drain current decays linearly toward zero, proportional gate drive control reduces the Gate voltage so the MOSFET can be turned off rapidly at zero current crossing. The GATE voltage falls to 1V when the Drain-Source voltage crosses the detection threshold voltage to minimize reverse current flow. 6. At zero Drain current, the controller GATE output voltage is pulled low to VG(off) to ensure that the MOSFET is off. 10% tr td(rise) VT 90% tf MOSFET Drain Voltage 0A 90% VG(off) Body Diode Conduction td(fall) 10% VD MOSFET Gate Voltage MOSFET Drain Current VG ID 1 2 3 4 5 6 Figure 2 - Timing diagram for a critical conduction mode Flyback converter |
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