ZXGD3105N8

3 of 13

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November 2011

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Diodes Incorporated

ZXGD3105N8

Characteristic

Symbol

Value

Unit

Supply voltage, relative to GND

15

V

Drain pin voltage

-3 to 100

V

Gate output voltage

V

Gate Driver peak source current

4

A

Gate Driver peak sink current

9

A

Reference voltage

V

Reference current

25

mA

Bias voltage

V

Bias current

100

mA

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear derating factor

(Note 4)

490

3.92

mW

mW/

°C

(Note 5)

655

5.24

(Note 6)

720

5.76

(Note 7)

785

6.28

Thermal Resistance, Junction to Ambient

(Note 4)

255

°C/W

(Note 5)

191

(Note 6)

173

(Note 7)

159

Thermal Resistance, Junction to Lead

(Note 8)

135

°C/W

Operating Temperature Range

-40 to +150

°C

Storage Temperature Range

-50 to +150

Notes:

4. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the

device is measured when operating in a steady-state condition.

6. Same as note (5), except both heatsinks are 10mm x 10mm.

7. Same as note (5), except both heatsinks are 15mm x 15mm.