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ADP198ACBZ-11-R7 数据表(PDF) 3 Page - Analog Devices

部件名 ADP198ACBZ-11-R7
功能描述  Logic Controlled, 1 A, High-Side Load
PDF  16 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP198ACBZ-11-R7 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
ADP198
Rev. D | Page 3 of 16
SPECIFICATIONS
VIN = 2.8 V, EN = VIN, IOUT = 200 mA, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT VOLTAGE RANGE
VIN
TJ = −40°C to +85°C
1.65
6.5
V
EN INPUT
Threshold
High
VIH
VIN ≤ 5 V, TJ = −40°C to +85°C
1.2
V
5 V < VIN, TJ = −40°C to +85°C
1.3
V
Low
VIL
1.65 V ≤ VIN ≤ 6.5 V, TJ = −40°C to +85°C
0.43
V
Pull-Down Current
IEN
500
nA
REVERSE BLOCKING
VOUT Current
VEN = 0, VIN = 0, VOUT = 6.5 V
7
µA
VEN = 0, VIN = 0, VOUT = 6.5 V, TJ = −40°C to +85°C
13
µA
Hysteresis
|VIN − VOUT|
75
mV
CURRENT
Quiescent Current
IQ
IOUT = 0 mA, TJ = −40°C to +85°C, includes EN pull-down current
VIN = VOUT = 2.8 V
2.5
µA
VIN = VOUT = 6.5 V
20
µA
Off State Current
IOFF
EN = GND
1.1
µA
EN = GND, TJ = −40°C to +85°C
2
µA
EN = GND, VOUT = 0 V, TJ = −40°C to +85°C
2
µA
VIN to VOUT RESISTANCE
RDSON
WLCSP
VIN = 5 V, ILOAD = 200 mA, VEN = 1.5 V
40
mΩ
VIN = 3.3 V, ILOAD = 200 mA, VEN = 1.5 V
50
80
mΩ
VIN = 2.8 V, ILOAD = 200 mA, VEN = 1.5 V
60
mΩ
VIN = 1.8 V, ILOAD = 200 mA, VEN = 1.5 V
130
mΩ
VIN = 1.65 V, ILOAD = 200 mA, VEN = 1.5 V
180
mΩ
LFCSP
VIN = 5 V, ILOAD = 200 mA, VEN = 1.5 V
75
120
mΩ
VIN = 3.3 V, ILOAD = 200 mA, VEN = 1.5 V
90
mΩ
VIN = 2.8 V, ILOAD = 200 mA, VEN = 1.5 V
100
mΩ
VIN = 1.8 V, ILOAD = 200 mA, VEN = 1.5 V
120
mΩ
VIN = 1.65 V, ILOAD = 200 mA, VEN = 1.5 V
200
mΩ
VOUT TIME
WLCSP
Turn-On Delay Time
tON_DLY
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF
7
μs
ADP198ACBZ-11-R7
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF
450
μs
LFCSP
Turn-On Delay Time
tON_DLY
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = L, SEL1 = L
30
μs
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = H, SEL1 = L
200
μs
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = L, SEL1 = H
450
μs
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = H, SEL1 = H
1100
μs



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