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ADP2381AREZ-R7 数据表(PDF) 3 Page - Analog Devices

部件名 ADP2381AREZ-R7
功能描述  20 V, 6 A Synchronous Step-Down
PDF  28 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP2381AREZ-R7 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
ADP2381
Rev. 0 | Page 3 of 28
SPECIFICATIONS
VIN = 12 V, TJ = −40°C to +125°C for min/max specifications, and TA = 25°C for typical specifications, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
PVIN
PVIN Voltage Range
V
PVIN
4.5
20
V
Quiescent Current
I
Q
No switching
2
2.8
3.5
mA
Shutdown Current
I
SHDN
EN/SS = GND
80
130
170
µA
PVIN Undervoltage Lockout Threshold
PVIN rising
4.3
4.5
V
PVIN falling
3.7
3.9
V
FB
FB Regulation Voltage
V
FB
0°C < T
J < 85°C
0.594
0.6
0.606
V
−40°C < T
J < +125°C
0.591
0.6
0.609
V
FB Bias Current
I
FB
0.01
0.1
µA
ERROR AMPLIFIER (EA)
Transconductance
g
m
360
500
620
µS
EA Source Current
I
SOURCE
40
60
80
µA
EA Sink Current
I
SINK
40
60
80
µA
INTERNAL REGULATOR (VREG)
VREG Voltage
V
VREG
V
PVIN = 12 V, IVREG = 50 mA
7.6
8
8.4
V
Dropout Voltage
V
PVIN = 12 V, IVREG = 50 mA
350
mV
Regulator Current Limit
65
100
135
mA
SW
High-Side On Resistance1
V
BST − VSW = 5 V
44
70
mΩ
High-Side Peak Current Limit
7.7
9.6
11.5
A
Negative Current-Limit Threshold Voltage2
20
mV
SW Minimum On Time
t
MIN_ON
120
170
ns
SW Minimum Off Time
t
MIN_OFF
200
300
ns
LOW-SIDE DRIVER (LD)
Rising Time2
t
R
C
DL = 2.2 nF; see Figure 17
20
ns
Falling Time2
t
F
C
DL = 2.2 nF; see Figure 20
10
ns
Sourcing Resistor
4
6
Ω
Sinking Resistor
2
3.5
Ω
BST
Bootstrap Voltage
V
BOOT
4.5
5
5.7
V
OSCILLATOR (RT PIN)
Switching Frequency
f
SW
RT pin connected to GND
210
290
360
kHz
RT pin open
400
550
690
kHz
R
OSC = 100 kΩ
425
500
570
kHz
Switching Frequency Range
f
SW
250
1400
kHz
SYNC
Synchronization Range
250
1400
kHz
SYNC Minimum Pulse Width
100
ns
SYNC Minimum Off Time
100
ns
SYNC Input High Voltage
1.3
V
SYNC Input Low Voltage
0.4
V
EN/SS
Enable Threshold
0.5
V
Internal Soft Start
1500
Clock cycles
SS Pin Pull-Up Current
I
SS_UP
2.6
3.3
4
µA



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