AFE5808A datasheet(10/66 Pages) TI1

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AFE5808A

SLOS729B – OCTOBER 2011 – REVISED APRIL 2012

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ELECTRICAL CHARACTERISTICS (continued)

AVDD_5 V = 5 V, AVDD = 3.3 V, AVDD_ADC = 1.8 V, DVDD = 1.8 V, AC-coupled with 0.1 µF at INP and bypassed to

ground with 15 nF at INM, No active termination, VCNTL = 0 V, fIN = 5 MHz, LNA = 18 dB, PGA = 24 dB, 14Bit, sample

rate = 65 MSPS, LPF Filter = 15 MHz, low noise mode, VOUT = –1 dBFS, internal 500 Ω CW feedback resistor, CMOS CW

clocks, ADC configured in internal reference mode, single-ended VCNTL mode, VCNTLM = GND, at ambient temperature

TA = 25°C, unless otherwise noted. Min and max values are specified across full-temperature range with AVDD_5 V = 5 V,

AVDD = 3.3 V, AVDD_ADC = 1.8 V, DVDD = 1.8 V

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNITS

ADC Power dissipation/CH

65 MSPS

mW/CH

50 MSPS

40 MSPS

20 MSPS

Power dissipation in power down mode

PDN_VCA = High, PDN_ADC = High

mW/CH

Complete power-down PDN_Global=High

0.6

Power-down response time

Time taken to enter power down

µs

Power-up response time

VCA power down

2µs+1% of PDN

time

µs

ADC power down

Complete power down

2.5

fin = 5 MHz, at 50 mVpp noise at 1 KHz on supply

(3)

–65

dBc

Power supply modulation ratio, AVDD and

AVDD_5V

fin = 5 MHz, at 50 mVpp noise at 50 KHz on supply

(3)

–65

dBc

Power supply rejection ratio

f = 10 kHz,VCNTL = 0 V (high gain), AVDD

–40

dBc

f = 10 kHz,VCNTL = 0 V(high gain), AVDD_5V

–55

dBc

f = 10 kHz,VCNTL = 1 V (low gain), AVDD

–50

dBc

(3)

PSMR specification is with respect to input signal amplitude.

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