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L6474 数据表(PDF) 10 Page - STMicroelectronics |
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L6474 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 51 page ![]() Electrical characteristics L6474 10/51 Doc ID 022529 Rev 2 t f Fall time (3) POW_SR = '00'; Iout = +1A 90 ns POW_SR = '00'; Iout = -1A 110 POW_SR = ‘11’, I out = ±1A 110 POW_SR = ‘10’, I out = ±1A 260 POW_SR = ‘01’, I load = ±1A 375 SR out_r Output rising slew-rate POW_SR = '00', I out = +1A 285 V/µs POW_SR = '00', I out = -1A 360 POW_SR = ‘11’, I out = ±1A 285 POW_SR = ‘10’, I out = ±1A 150 POW_SR = ‘01’, I out = ±1A 95 SR out_f Output falling slew-rate POW_SR = '00', I out = +1A 320 V/µs POW_SR = '00', I out = -1A 260 POW_SR = ‘11’, I out = ±1A 260 POW_SR = ‘10’, I out = ±1A 110 POW_SR = ‘01’, I out = ±1A 75 Dead time and blanking t DT Dead time (1) POW_SR = '00' 250 ns POW_SR = ‘11’, f OSC = 16 MHz 375 POW_SR = ‘10’, f OSC = 16 MHz 625 POW_SR = ‘01’, f OSC = 16 MHz 875 tblank Blanking time (1) POW_SR = '00' 250 ns POW_SR = ‘11’, f OSC = 16 MHz 375 POW_SR = ‘10’, f OSC = 16 MHz 625 POW_SR = ‘01’, f OSC = 16 MHz 875 Source-drain diodes VSD,HS High side diode forward ON voltage Iout = 1 A 1 1.1 V VSD,LS Low side diode forward ON voltage Iout = 1 A 1 1.1 V trrHS High side diode reverse recovery time Iout = 1 A 30 ns trrLS Low side diode reverse recovery time Iout = 1 A 100 ns Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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