ALD110808/ALD110808A/ALD110908/ALD110908A

Advanced Linear Devices

2 of 11

ABSOLUTE MAXIMUM RATINGS

Drain-Source voltage, VDS

10.6V

Gate-Source voltage, VGS

10.6V

Power dissipation

500 mW

Operating temperature range SCL, PCL, SAL, PAL package

0°C to +70°C

Storage temperature range

-65°C to +150°C

Lead temperature, 10 seconds

+260°C

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

Notes:

1

Consists of junction leakage currents

OPERATING ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test Conditions

Gate Threshold Voltage

VGS(th)

0.78

0.80

0.82

0.78

0.80

0.82

V

IDS =1µA, VDS = 0.1V

Offset Voltage

VOS

12

3

10

mV

VGS(th)1-VGS(th)2

Offset Voltage Tempco

TCVOS

55

µV/°CVDS1 = VDS2

GateThreshold Voltage Tempco

TCVGS(th)

-1.7

-1.7

mV/°CID = 1µA, VDS = 0.1V

0.0

0.0

ID = 20µA, VDS = 0.1V

+1.6

+1.6

ID = 40µA, VDS = 0.1V

On Drain Current

IDS (ON)

12.0

12.0

mA

VGS = +10.3V, VDS = +5V

3.0

3.0

VGS = +4.8V, VDS = +5V

Forward Transconductance

GFS

1.4

1.4

mmho

VGS = +4.8V

VDS = +9.8V

Transconductance Mismatch

∆GFS

1.8

1.8

%

Output Conductance

GOS

68

68

µmho

VGS = +4.8V

VDS = +9.8V

Drain Source On Resistance

RDS (ON)

500

500

Ω

VDS = +0.1V

VGS = +4.8V

Drain Source On Resistance

∆RDS (ON)

0.5

0.5

%

Mismatch

Drain Source Breakdown

BVDSX

10

10

V

IDS = 1.0µA

Voltage

V-= VGS = -1.0V

IDS (OFF)

10

400

10

400

pA

VGS = -0.2V, VDS =+5V

V- = -5V

44

nA

TA = 125°C

IGSS

3

200

3

200

pA

VDS = 0V VGS = +5V

11

nA

TA =125°C

Input Capacitance

CISS

2.5

2.5

pF

Transfer Reverse Capacitance

CRSS

0.1

0.1

pF

Turn-on Delay Time

ton

10

10

ns

V+ = 5V RL= 5KΩ

Turn-off Delay Time

toff

10

10

ns

V+ = 5V RL= 5KΩ

Crosstalk

60

60

dB

f = 100KHz

ALD110808A/ALD110908A

ALD110808/ALD110908