Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286

www.aldinc.com

PIN CONFIGURATION

GENERAL DESCRIPTION

ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision

monolithic quad/dual enhancement mode N-Channel MOSFETs matched

at the factory using ALD’s proven EPAD® CMOS technology. These de-

vices are intended for low voltage, small signal applications.

These MOSFET devices are built on the same monolithic chip, so they

exhibit excellent temperature tracking characteristics. They are versatile

as circuit elements and are useful design component for a broad range of

analog applications. They are basic building blocks for current sources,

differential amplifier input stages, transmission gates, and multiplexer

applications. For most applications, connect the V- and IC pins to the most

negative voltage in the system and the V+ pin to the most positive voltage.

All other pins must have voltages within these voltage limits at all times.

ALD110808/ALD110908 devices are built for minimum offset voltage and

differential thermal response, and they are suited for switching and ampli-

fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias

current, low input capacitance and fast switching speed are desired. As

these are MOSFET devices, they feature very large (almost infinite) cur-

rent gain in a low frequency, or near DC, operating environment.

These devices are suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result from extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 30pA at room temperature. For example, DC beta of the

device at a drain current of 3mA and input leakage current of 30pA at

25°C is = 3mA/30pA = 100,000,000.

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +0.80V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• High input impedance — 10

• DC current gain >10

8

• Low input and output leakage currents

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stage

• Voltage comparator

• Voltage bias circuits

• Sample and Hold

• Analog inverter

• Level shifters

• Source followers and buffers

• Current multipliers

• Analog switches / multiplexers

* Contact factory for industrial temp. range or user-specified threshold voltage values.

Operating Temperature Range*

0°C to +70°C0°C to +70°C

16-Pin

16-Pin

8-Pin

8-Pin

SOIC

Plastic Dip

SOIC

Plastic Dip

Package

Package

Package

Package

ALD110808ASCL

ALD110808APCL

ALD110908ASAL

ALD110908APAL

ALD110808SCL

ALD110808PCL

ALD110908SAL

ALD110908PAL

e

EPAD

TM

®

N A

B L

E D

E

ALD110808/ALD110808A/ALD110908/ALD110908A

VGS(th)= +0.80V

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

PRECISION MATCHED PAIR MOSFET ARRAY

*IC pins are internally connected.

Connect to V-

SCL, PCL PACKAGES

SAL, PAL PACKAGES

ALD110808

ALD110908

IC*

1

2

3

14

15

16

4

13

5

12

IC*

6

7

8

10

11

IC*

IC*

9

M 4

M 3

M 1

M 2

V-

1

2

3

6

7

8

4

5

M 1

M 2

V-

V-

V-

IC*

IC*