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ALD110808ASCL 数据表(PDF) 7 Page - Advanced Linear Devices

部件名 ALD110808ASCL
功能描述  QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
PDF  11 Pages
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制造商  ALD [Advanced Linear Devices]
网页  http://www.aldinc.com
标志 ALD - Advanced Linear Devices

ALD110808ASCL 数据表(HTML) 7 Page - Advanced Linear Devices

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ALD110808/ALD110808A/ALD110908/ALD110908A
Advanced Linear Devices
7 of 11
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
5
DRAIN SOURCE ON CURRENT (µA)
1
10
100
1000
-55°C ≤ TA ≤ +125°C
0
-5
-2.5
2.5
NORMALIZED SUBTHRESHOLD
CHARACTERISTICS RELATIVE
GATE THRESHOLD VOLTAGE
DRAIN-SOURCE CURRENT (nA)
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
10000
1000
100
10
1
0.1
VD = 0.1V
55°C
25°C
TRANCONDUCTANCE vs. DRAIN-SOURCE
ON CURRENT
DRAIN -SOURCE ON CURRENT(mA)
2
4
6
8
10
0.0
1.2
0.9
0.6
0.3
0
TA = 25°C
VDS = +10V
0.5
1.0
2.0
5.0
0.2
0.1
DRAIN-SOURCE ON VOLTAGE (V)
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
0.0
0.2
0.5
0.6
0.3
VGS(TH)=-3.5V
VGS(TH)=-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
TRANSFER CHARACTERISTICS
GATE-SOURCE VOLTAGE (V)
-4
-2
0
2
4
8
10
6
1.6
1.2
0.8
0.4
0.0
TA = 25°C
VDS = +10V
VGS(TH) = -3.5V
VGS(TH) = -0.4V
VGS(TH) = 0.0V
VGS(TH) = +0.2V
VGS(TH) = +0.8V
VGS(TH) = -1.3V
VGS(TH) = +1.4V
SUBTHRESHOLD CHARACTERISTICS
DRAIN -SOURCE CURRENT (nA)
2.5
2.0
1.0
0.5
0.0
1.5
-0.5
100000 10000
1000
100
10
1
0.1
55°C
VGS(th) = 0.2V
VGS(th) = 0.4V
25°C
THRESHOLD VOLTAGES
vs. AMBIENT TEMPERATURES
AMBIENT TEMPERATURE (
OC)
2.0
1.0
-1.0
-2.0
-3.0
0.0
-4.0
-25
25
75
125
IDS = +1µA
VDS = +0.1V
VGS(th) = -0.4V
VGS(th) = -1.3V
VGS(th) = -3.5V
VGS(th) = 0.0V
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
4.0
3.0
2.0
0
AMBIENT TEMPERATURE (°C)
-50
-25
0
25
50
125
100
75
1.0
VDS = +0.1V ID = 1.0µA
Vt = 0.8V
Vt = 1.4V
Vt = 0.4V
Vt = 0.2V
Vt = 0.0V



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