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BAP70AM 数据表(PDF) 47 Page - NXP Semiconductors |
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BAP70AM 数据表(HTML) 47 Page - NXP Semiconductors |
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47 / 130 page  48 NXP Semiconductors RF Manual 16th edition 2.1.4 ThenewgenerationofLDMOSRFpowerforwirelessinfrastructures:NXP'sGen8 NXP announced last year the 8th generation of its renowned RF power device portfolio for base stations. Listening carefully to the world’s leading infrastructure providers and understanding their requirements, we took a holistic approach to the development of Gen8. This means that we scrutinized every detail of a power transistor and reconsidered the entire “transistor system” to ceate a new generation that performs markedly better than its predecessors, and its competitors, and again sets standards for the industry. Gen8 addresses the key trends in the wireless infrastructure industry ` Increasing signal bandwidths up to 100 MHz to enable full-band operation ` Cost sensitivity: peak powers up to 270 Watts in SOT502- sized packages ` Reduction in the size/weight/volume of the cabinet ` The ongoing need for greater electrical efficiency to reduce cooling requirements and operational expenditures ` Ever-increasing output power ` The need to deploy multi-standard and future-proof solutions Gen8 is the answer to all these often conflicting requirements. The package and die design, as well as the input and output match structures, have been optimized to enable wideband, affordable, compact, multi-standard, and highly efficient Doherty power amplifiers. Solutions for all cellular frequency bands are currently being sampled and are in production or will be released throughout 2012. The first wave of Gen8 transistors Type f min (MHz) f max (MHz) P1dB (W) Matching Package Planned release Description BLF8G10L(S)-160 920 960 160 I/O SOT502 Released Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications BLF8G10L(S)-160V 700 1000 160 I/O SOT1244 Released Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications BLF8G10LS-200GV 700 1000 200 I/O SOT1244C Q412 Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) BLF8G10LS-270GV 700 1000 270 I/O SOT1244C Q412 Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) BLF8G10L(S)-300P 850 960 300 I/O SOT539 Q312 Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) BLF8G10LS-400PGV 700 1000 400 I/O SOT1242C Q412 Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) BLF8G20L(S)-200V 1800 2000 200 I/O SOT1120 Released Gen8 ceramic LDMOS transistor for GSM & LTE applications BLF8G20LS-270GV 1800 2000 270 I/O SOT1244C Q412 Gen8 ceramic LDMOS transistor for GSM & LTE applications (gull-wing) BLF8G20LS-270PGV 1800 2000 270 I/O SOT1242C Q412 Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications (gull-wing) BLF8G22LS-160BV 2000 2200 160 I/O SOT1120B Released Gen8 ceramic LDMOS transistor for WCDMA & LTE applications BLF8G22LS-200GV 2000 2200 200 I/O SOT1244C Q312 Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing) BLF8G22LS-270GV 2000 2200 270 I/O SOT1244C Q312 Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing) BLF8G22LS-400PGV 2000 2200 400 I/O SOT1242C Q312 Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) BLF8G24L(S)-200P 2300 2400 200 I/O SOT539 Q312 Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications BLF8G27LS-140G 2500 2700 140 I/O SOT502E Q412 Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing) BLF8G27LS-140V 2600 2700 140 I/O SOT1244B Q412 Gen8 ceramic LDMOS transistor for WCDMA & LTE applications BLF8G27LS-200PGV 2500 2700 200 I/O SOT1242C Q412 Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) BLF8G27LS-280PGV 2500 2700 280 I/O SOT1242C Q412 Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) Note: All devices are internally matched (I/O) |
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