BAP70AM datasheet(65/130 Pages) NXP

65 / 130 page

NXP Semiconductors RF Manual 16th edition

2.5.4

Buildingondecadesofinnovationinmicrowaveandradar

NXP builds on more than 50 years of history in semiconductor technology and component design. For more

than three decades we have led in providing high-performance RF technologies for microwave applications.

The company has built a strong position in the field of RF small-signal and power transistors for microwave

amplifiers with best-in-class Si devices and processing technologies.

We were the first semiconductor company to supply S-band

transistors (2700 to 3500 MHz) based on laterally diffused

metal-oxide-silicon (LDMOS). To further strengthen our

position towards the future, we are currently developing

new high-power and high-bandwidth technologies based on

gallium nitride (GaN) material.

Another enabling technology is NXP’s BICMOS process

QUBiC, which is available in several variants with f

T up to

200 GHz, each specialized to address specific small-signal

RF applications.

The product portfolio encompasses:

- Low-noise amplifiers (LNAs)

- Variable-gain amplifiers (VGAs)

- Mixers

- Local oscillators (LOs)

- LO generators

NXP now also focuses on architectural breakthroughs and

has developed highly integrated products for microwave and

millimeter wave. One example is a family of LO generators

from 7 to 15 GHz with integrated PLL and VCO. Another

example is an integrated RF power module in S-band

(3.1-3.5 GHz) at 200 W.

RF small-signal product highlight

Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process

technology, these highly integrated, alignment-free LO

generators TFF1xxxHN are low-power, low-spurious solutions

that simplify design-in and lower the total cost of ownership.

Features

` Lowest noise LO generators for 7 to 15 GHz range

` Maximum power consumption for all types, typical 330 mW

` Phase-noise compliant with IESS-308 (Intelsat)

` Proven QUBiC4X SiGe:C technology (120 GHz f

T process)

` External loop ﬁlter

` Differential input and output

` Lock-detect output

` Internally stabilized voltage reference for loop filter

RF power product highlight

The BLS6G2933P-200 is the first LDMOS-based, industry-

standard pallet produced by NXP. This pallet offers more than

40% efficiency and includes the complete bias network for

S-band applications.

BAP70AM 数据表(PDF) 65 Page - NXP Semiconductors

BAP70AM 数据表(HTML) 65 Page - NXP Semiconductors

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