BAP70AM datasheet(63/130 Pages) NXP

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NXP Semiconductors RF Manual 16th edition

This technology works without any additional electrodes in

the bulb, unlike standard high-intensity discharge lamps.

No electrodes means very long operating lifetimes, since

the contamination and wire erosion that lead to decreased

efficiency and eventual lamp failure are precluded. The RF

light source lives up to 50,000 hrs when it reaches 50% of its

original light output. Typical high-intensity discharge lamps, by

comparison, achieve 20,000 hrs operating life. Another strong

point of the plasma light is its efficiency: 1 W of RF power is

converted to 130-140 lm of light. This leads to very compact,

very bright lamps that easily emit 10,000 to 20,000 lm of white

light with a close-to-sunlight color rendition.

The key enabler for the RF light source is RF technology,

based on Si LDMOS RF power transistors. LDMOS technology

operating at 28 V is the leading RF power technology for cellular

base stations or broadcast transmitters as final amplifier stages

in the frequency range between a few MHz up to 3.8 GHz.

Recently, another LDMOS format, 50 V LDMOS, has emerged

for use in broadcast, ISM, defense and avionics applications.

It combines high power density to achieve power levels up to

1,200 W per single device and outstanding ruggedness, with

high gain and efficiency at frequencies of up to 1.5 GHz.

Comparison of lighting technologies

The table below summarizes currently available technologies that

generate bright light with varying degrees of efficiency. It lists a

few key parameters, including lifetime, luminous flux, efficacy, color

rendition index, color temperature, start-up time, and re-strike time

(time to start after switch-off from normal operation).

Type

Lifetime

(hrs)

Luminous

flux

(klm)

Efficacy

(lm/W)

Color

rendering

Color

temperature

(K)

Start-up

time

(s)

Re-strike

time

(s)

Incandescent

2,000

1,700

10 to 17

100

3200

0.1

Fluorescent

10,500

3,000

115

51 to 76

2940 to 6430

0.3

0.1

LED

25,000

130

60 to 100

6000

0.1

HID (high-

intensity

discharge)

20,000

25,000

65 to 115 40 to 94 4000 to 5400

480

RF plasma

50,000

25,000

100 to140 70 to 94 4000 to 5500

2.5.2

RF-drivenplasmalighting:

Thenextrevolutioninlightsourcesarepoweredbysolid-stateRFtechnology

The plasma light source is among the brightest and most

efficient available to date and boasts a very long life time.

Important to note is the high brightness per bulb: much

brighter than LEDs, for example. Consequently, it takes

multiple LEDs to generate the light output of a single plasma

light source. Hence, LED luminaries for street lighting will be

considerably larger than those for plasma light sources.

RF implications

The RF plasma lighting sources can operate at a wide range of RF

frequencies, but initial applications typically focus at frequencies

of around a few hundred megahertz. At these frequencies both

the 28 and 50 V LDMOS technologies can be used, yielding

high efficiency values of 70% to more than 80% and low-heat

dissipation making compact plasma lamp designs possible.

The RF-driven plasma light is a perfect example of novel

applications that can be powered by RF energy in the

industrial, scientific, and medical (ISM) realm. Established

technologies use RF to pump a gas discharge in a laser cavity.

These "gas discharge" applications and, in general, most of

the ISM applications, typically form highly mismatched RF

loads during some part of the usage cycle. In the case of

gas discharges, for example, the gas cavity acts as an "open

circuit" during switch-on. This in turn means that without

protection or other measures, all of the "injected" RF power

reflected back into the final stage of the amplifier needs to

be dissipated in the transistor(s) right there and most likely

destroys the device(s) if this situation lasts too long. After the

discharge strikes, the load impedance reverts to "matched,"

eventually, and the transistor sees an acceptable load.

Obviously, these mismatched conditions occur every time the

plasma is "switched on,” exerting strain on the finals. LDMOS

transistors are designed to be extremely rugged and generally

withstand these mismatch situations without degrading over

time.

This ruggedness, combined with the high power density and

efficiency achievable, make LDMOS the preferred technology

for RF lighting and other equally demanding applications in the

ISM realm.

Recent developments in RF power technology, such as improved cost structure, ruggedness, and power levels

of up to 1200 W per device, have enabled a breakthrough light source technology, called ‘RF plasma lighting’.

All RF plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas

and metal halide mixtures. The bulb is powered by direct RF radiation, which ignites the gas mixtures to

create and power a bright plasma, the color of which can be tuned by the composition of its constituents.

Table 1: Comparison of light generation. Note: numbers are only valid for a

qualitative comparison. Source: www.wikipedia.org and references therein.

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