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STRH40P10 数据表(PDF) 6 Page - STMicroelectronics

部件名 STRH40P10
功能描述  Rad-Hard P-channel 100 V, 34 A Power MOSFET
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STRH40P10 数据表(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STRH40P10
6/18
Doc ID 18354 Rev 6
Table 8.
Pre-irradiation source drain diode (1)
1.
Refer to the
Figure 16.
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(2)
2.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
34
136
A
A
VSD
(3)
3.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 30 A, VGS = 0
1.1
V
trr
(4)
Qrr
(4)
IRRM
(4)
4.
Not tested in production, guaranteed by process.
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 34 A,
di/dt = 40 A/µs
VDD= 12 V, TJ = 25 °C
276
345
4.1
316
414
ns
µC
A
trr
(4)
Qrr
(4)
IRRM
(4)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 34 A,
di/dt = 40 A/µs
VDD= 12 V, TJ = 150 °C
473
7.1
133
ns
µC
A



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