STRH40P10

Electrical ratings

Doc ID 18354 Rev 6

3/18

1

Electrical ratings

Note:

For the P-channel MOSFET actual polarity of voltages and current has to be reversed.

Table 2.

Absolute maximum ratings (pre-irradiation)

Symbol

Parameter

Value

Unit

(1)

1.

100

V

(2)

2.

This value is guaranteed over the full range of temperature.

Gate-source voltage

±20

V

(3)

3.

Rated according to the Rthj-case + Rthc-s.

Drain current (continuous)

34

A

(3)

21

A

(4)

4.

Pulse width limited by safe operating area.

Drain current (pulsed)

136

A

(3)

Total dissipation

176

W

5.

Peak diode recovery voltage slope

2.5

V/ns

Storage temperature

- 55 to 150

°C

Operating junction temperature

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

0.71

°C/W

Case-to-sink typ

0.21

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not-repetitive

TBD

A

(1)

Single pulse avalanche energy

1133

mJ

Single pulse avalanche energy

332

mJ