STRH40P10 datasheet(5/18 Pages) STMICROELECTRONICS

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STRH40P10

Electrical characteristics

Doc ID 18354 Rev 6

5/18

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Note:

For the P-channel MOSFET actual polarity of voltages and current has to be reversed.

Pre-irradiation

Table 5.

Pre-irradiation on/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage drain

current (VGS = 0)

80% BVDss

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = 20 V

VGS = -20 V

-100

100

BVDSS

(1)

This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).

Drain-to-source breakdown

voltage

VGS = 0, ID = 1 mA

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

4.5

RDS(on)

Static drain-source on

resistance

VGS = 12 V; ID = 17 A

0.060

0.075

Ω

Table 6.

Pre-irradiation dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

(1)

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VGS = 0, VDS = 25 V,

f=1 MHz

3710

510

204

4640

635

255

5570

760

306

Qgs

Qgd

Total gate charge

Gate-to-source charge

Gate-to-drain (“Miller”)

charge

VDD = 50 V, ID = 34 A,

VGS=12 V

130

162

194

(1)

Not tested, guaranteed by process.

Gate input resistance

f=1MHz gate DC bias=0

test signal level=20mV

open drain

1.5

Ω

Table 7.

Pre-irradiation switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 50 V, ID = 17 A,

RG = 4.7 Ω, VGS = 12 V

129

190

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