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ACE633 数据表(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE633 数据表(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 10 page ![]() ACE633 60V Complementary Enhancement Mode Field Effect Transistor VER 1.2 2 Packaging Type SOP-8 8 7 6 5 1 2 3 4 Ordering information ACE633 XX + H Electrical Characteristics (N-Channel) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 60 V Drain-Source On Resistance RDS(ON) VGS=10V, ID=4.5A 27 35 mΩ VGS=4.5V, ID=3A 32 40 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 1.4 3 V Gate Leakage Current IGSS VDS=0V, VGS=±20V 100 nA Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V 1 uA Forward Transconductance gFS VDS=15V, ID =5.3V 24 S Diode Forward Voltage VSD ISD=1A, VGS=0V 0.73 1.0 V Maximum Body-Diode Continuous Current Is 3.1 A FM : SOP-8 Pb - free Halogen - free |
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