ACE633 datasheet(1/10 Pages) ACE

部件名	ACE633

功能描述	60V Complementary Enhancement Mode Field Effect Transistor

PDF	10 Pages

Scroll/Zoom	100%

制造商	ACE [ACE Technology Co., LTD.]

网页	http://www.ace-ele.com

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1 / 10 page

ACE633

60V Complementary Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE633 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate

charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Features

 N-Channel

VDS(V)=60V

ID=5A

RDS(ON)

<35mΩ (V

GS=10V)

<40mΩ (V

GS=4.5V)

 P-Channel

VDS(V)=-60V

ID=-3.5A

RDS(ON)

<75

mΩ (V

GS=-10V)

<90

mΩ (V

GS=-4.5V)

Absolute Maximum Ratings

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Typical

Unit

N-Channel P-Channel

Drain-Source Voltage

VDSS

60

-60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (TJ=150℃)

*AC

TA=25℃

ID

5

-3.5

A

TA=70℃

4

-2.8

Drain Current (pulse) * B

IDM

22

-22

A

Power Dissipation

TA=25℃

PD

2

W

TA=70℃

1.3

Operating Junction Temperature

TJ

-55 to 150

OC

Storage Temperature Range

TSTG

-55 to 150

OC

类似零件编号 - ACE633

制造商	部件名	数据表	功能描述
ACE Technology Co., LTD...	ACE632	1Mb / 11P	The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. VER 1.3
	ACE634	1Mb / 9P	20V Complementary Enhancement Mode Field Effect Transistor VER 1.2
	ACE6344B	937Kb / 11P	N and P-Channel Enhancement Mode MOSFET VER 1.1
	ACE636B	505Kb / 5P	Common Drain Dual N-Channel Enhancement Mode Field Effect VER 1.2

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