ACE633 datasheet(6/10 Pages) ACE

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ACE633

60V Complementary Enhancement Mode Field Effect Transistor

VER 1.2

Electrical Characteristics (P-Channel)

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

-60

Drain-Source On Resistance

RDS(ON)

VGS=-10V, ID=-4.5A

mΩ

VGS=-4.5V, ID=-3A

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-1

-1.7

-2.5

Gate Leakage Current

IGSS

VDS=0V, VGS=±20V

100

Zero Gate Voltage Drain Current

IDSS

VDS=-48V, VGS=0V

-1

Forward Transconductance

gFS

VDS=-10V, ID =-7V

Diode Forward Voltage

VSD

ISD=-1A, VGS=0V

-0.76

-1.0

Maximum Body-Diode

Continuous Current

-3

Switching

Total Gate Charge

VDS=-30V, VGS=-10V,

ID=-7A

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VGS=-10V, VDS=-30V,

RL=10Ω, RGEN=3Ω

Turn-On Rise Time

3.8

7.6

Turn-Off Delay Time

td(off)

31.5

Turn- Off Rise Time

7.5

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=-30V, f=1MHZ

760

Output Capacitance

Coss

Reverse Transfer capacitance

Crss

Note:

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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