STTH102-Y datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STTH102-Y

2/7

Doc ID 17982 Rev 1

Characteristics

To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.130 IF

(RMS)

Table 2.

Absolute rating (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

IF(AV)

Average forward current

TL = 148 °C δ = 0.5

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

Tstg

Storage temperature range

-65 to + 175

°C

Operating junction temperature range

-40 to +175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

°C/W

Table 4.

Static Electrical Characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

(2)

Forward voltage drop

Tj = 25 °C

IF = 700 mA

0.90

IF = 1 A

0.97

Tj = 125 °C

IF = 1 A

0.68

0.78

Pulse test: tp = 5 ms, δ < 2%

Pulse test: tp = 380 µs, δ < 2%

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A Irr = 0.25 A

IR = 1 A

tfr

Forward recovery time

Tj = 25 °C

IF = 1 A dIF/dt = 50 A/ms

VFR = 1.1 x VFmax

VFP

Forward recovery

voltage

Tj = 25 °C

IF = 1 A dIF/dt = 50 A/ms

1.8

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