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STTH102-Y 数据表(PDF) 4 Page - STMicroelectronics |
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STTH102-Y 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics STTH102-Y 4/7 Doc ID 17982 Rev 1 Figure 7. Peak recovery current versus dIF/dt (90% confidence) Figure 8. Reverse recovery charges versus dIF/dt (90% confidence) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 10 100 1000 I (A) RM dI /dt(A/µs) F I =1A F V =100V T =125°C R j T =125°C j T =25°C j 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0 1 10 100 1000 Q (nC) rr dI /dt(A/µs) F I =1A F V =100V R T =125°C j T =25°C j Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 10. Thermal resistance junction to ambient versus copper surface under each lead 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175 I; t ; Q [T ] / RM rr rr j I ; t ; Q [T =25°C] RM rr rr j T (°C) j IRM trr QRR I=I dI /dt=200A/µs F F(AV) F V =100V R 0 10 20 30 40 50 60 70 80 90 100 110 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 R (°C/W) th(j-a) S(cm²) Epoxy printed circuit board FR4, copper thickness: 35 µm |
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