STTH102-Y datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

STTH102-Y

Characteristics

Doc ID 17982 Rev 1

3/7

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

(W)

F(AV)

(A)

F(AV)

δ=tp/T

δ = 1

δ = 0.5

δ = 0.05 δ = 0.1

δ = 0.2

(A)

F(AV)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

125

150

175

=120°C/W

th(j-a)

R=R

th(j-a)

th(j-I)

δ=tp/T

(°C)

amb

Figure 3.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

Figure 4.

Forward voltage drop versus

forward current

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

δ=t /T

Z/R

th(j-a)

δ = 0.5

δ = 0.2

δ = 0.1

t (s)

epoxy printed circuit board,

= 35 µm, recommended pad layout

(Cu)

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

(A)

(V)

T =125°C

(maximum values)

T =125°C

(typical values)

T =25°C

(maximum values)

Figure 5.

Junction capacitance versus

reverse voltage applied

(typical values)

Figure 6.

Reverse recovery time versus dIF/dt

(90% confidence)

100

1000

C(pF)

F=1MHz

=30mV

T =25°C

OSC

RMS

V (V)

100

1000

t (ns)

dI /dt(A/µs)

I =1A

V =100V

T =125°C

T =25°C

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