VNH7013XP-E datasheet(8/24 Pages) STMICROELECTRONICS

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Electrical specifications

VNH7013XP-E

8/24

Doc ID 022370 Rev 3

2.2

Electrical characteristics

Tj = 25 °C, unless otherwise specified.

Table 4.

Power off

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID =10 mA, VGS = 0 V

—

IDSS

Zero gate voltage drain

current (VGS=0V)

VDS =28 V;

-40 °C < Tj <150 °C

—

100

µA

VDS =28 V; Tj = 25 °C

—

µA

IGSS

Gate-source leakage current

(VDS=0V)

VGS = ±10 V

—

±100

Table 5.

Power on

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

VGS(th)

Gate threshold voltage VDS = VGS; ID = 1 mA

dVGS(th)/dT

Gate threshold voltage

temperature derating

VDS = VGS; ID = 1 mA

7.5

mV/°C

RDS(on) HS

Static drain-source on

resistance

VGS = 10 V; ID = 5 A; Tj =25°C

5.7

VGS = 10 V; ID = 5 A; Tj = 150 °C

11.9

RDS(on) LS

Static drain-source on

resistance

VGS = 10 V; ID = 5 A; Tj = 25 °C

7.3

VGS = 10 V; ID = 5 A; Tj = 150 °C

15.1

Table 6.

Dynamic

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Gfs_HS

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%.

Forward transconductance

VDS =15V; ID =20A;

Tj =25°C

—20

—

Gfs_LS

(1)

Forward transconductance

—

17.5

—

Ciss_HS

Input capacitance

VDS = 25 V; f = 1 MHz;

VGS =0 V (see Figure 6)

—

1836

—

Coss_HS

Output capacitance

—

426

—

Crss_HS

Reverse transfer capacitance

—

Ciss_LS

Input capacitance

VDS = 25V; f= 1MHz;

VGS =0 V (see Figure 7)

—

1250

—

Coss_LS

Output capacitance

—

311

—

Crss_LS

Reverse transfer capacitance

—

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