VNH7013XP-E datasheet(9/24 Pages) STMICROELECTRONICS

9 / 24 page

VNH7013XP-E

Electrical specifications

Doc ID 022370 Rev 3

9/24

Table 7.

Gate resistance

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

RG_HS

Gate resistance HS

VDD =15V; fgate =1 MHz

—20

—

RG_LS

Gate resistance LS

—

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Pulse width limited by safe operating area.

Forward on voltage

ISD =20A; VGS =0 V;

Tj =25°C

—0.9

1.1

trr

Reverse recovery time

ISD = 20 A; di/dt = 100 A/µs;

VDD =20V; Tj = 150 °C

(see

Figure 10)

—50

Qrr

Reverse recovery charge

—

IRRM

Reverse recovery current

—

0.8

Table 9.

Switching on HSD

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn on delay time

VDD =15V; ID =20A;

RG =4.7 Ω; VGS =10V

—

Rise time

—

319

—

Total gate charge

VDD =15 V; ID =20 A;

VGS =10V

(see

Figure 4 and Figure 9)

—36

—

Qgs

Gate-source charge

—

8.5

—

Qgd

Gate-drain charge

—

Table 10.

Switching on LSD

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn on delay time

VDD =15V; ID =20A;

RG =4.7 Ω; VGS =10V

—

Rise time

—

430

—

Total gate charge

VDD =15V; ID =20A;

VGS =10V

(see

Figure 5 and Figure 9)

—23

—

Qgs

Gate-source charge

—

Qgd

Gate-drain charge

—

2.5

—

Table 11.

Switching off HSD

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off delay time

VDD =15V; ID =20A;

RG =4.7 Ω; VGS =10V

(see

Figure 11)

—253

—

Fall time

—

169

—

VNH7013XP-E 数据表(PDF) 9 Page - STMicroelectronics

VNH7013XP-E 数据表(HTML) 9 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

数据表下载

链接网址

VNH7013XP-E 数据表(PDF) 9 Page - STMicroelectronics

VNH7013XP-E 数据表(HTML) 9 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

数据表 下载

链接网址

数据表下载