TTP/C-C1 Communications Controller Data Sheet

AS8201

Rev. NC, October 1999

Page 5 of 13

Austria Mikro Systeme International AG

63-79

ROM_ADDRESS[0:16]

O

ROM address bus, range = 2^17 = 128k

80

ROM_RESETB

O

ROM reset line, active low

81

ROM_CEB

O

ROM chip enable, active low

82

ROM_OEB

O

ROM output enable, active low

83

ROM_WEB

O

ROM write enable, active low; “read”if high.

84

ROM_READY

used

85

VDD

P

positive power supply

86

VSS

P

negative power supply

87-94

ROM_DATA[0:7]

I/O ROM data bus (lower byte)

95

VDD

P

positive power supply

96

VSS

P

negative power supply

97-

104

ROM_DATA[8:15]

I/O ROM data bus (higher byte)

105

VDD

P

positive power supply

106

VSS

P

negative power supply

107-

117

RAM_ADDRESS[0:10]

I

DPRAM address bus, range = 2^11 = 2048

118

RAM_CEB

I

DPRAM chip enable, active low

119

VDD

P

positive power supply

120

VSS

P

negative power supply

I

Input CMOS

Input CMOS with pull up

Input CMOS with pull down

O

Output CMOS

I/O

Input/Output CMOS tristate

P

Power Pin

A

Analog Pin

Electrical Specification s

Absolute Maximum Ratings ( Non Operating)

SYMBOL PARAMETER

MIN

MAX

NOTE

VDD

DC Supply Voltage

-0.3 V

7.0 V

Input Voltage on any Pin

- 0.3 V

VDD + 0.3 V

Input Current on any Pin

-100 mA

100 mA

25°C

Storage Temperature

-55 oC

150 oC

Soldering Temperature

260 oC

1)

Soldering Time

10 sec

Reflow and Wave

H

Humidity

5 %

85 %

ESD

Electrostatic Discharge

1000 V

HBM: R = 1.5 k

Ω, C = 100 pF

Note: Stresses above those listed under “Absolute Maximum Ratings”may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may effect device reliability (e.g. hot carrier degradation).