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41594B 数据表(PDF) 97 Page - Microchip Technology |
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41594B 数据表(HTML) 97 Page - Microchip Technology |
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97 / 372 page  2011-2012 Microchip Technology Inc. Preliminary DS41594B-page 97 PIC12LF1840T48A EXAMPLE 11-2: DATA EEPROM WRITE FIGURE 11-1: FLASH PROGRAM MEMORY READ CYCLE EXECUTION BANKSEL EEADRL ; MOVLW DATA_EE_ADDR ; MOVWF EEADRL ;Data Memory Address to write MOVLW DATA_EE_DATA ; MOVWF EEDATL ;Data Memory Value to write BCF EECON1, CFGS ;Deselect Configuration space BCF EECON1, EEPGD ;Point to DATA memory BSF EECON1, WREN ;Enable writes BCF INTCON, GIE ;Disable INTs. MOVLW 55h ; MOVWF EECON2 ;Write 55h MOVLW 0AAh ; MOVWF EECON2 ;Write AAh BSF EECON1, WR ;Set WR bit to begin write BSF INTCON, GIE ;Enable Interrupts BCF EECON1, WREN ;Disable writes BTFSC EECON1, WR ;Wait for write to complete GOTO $-2 ;Done Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 BSF EECON1,RD executed here INSTR(PC + 1) executed here Forced NOP executed here PC PC + 1 EEADRH,EEADRL PC+3 PC + 5 Flash ADDR RD bit EEDATH,EEDATL PC + 3 PC + 4 INSTR (PC + 1) INSTR(PC - 1) executed here INSTR(PC + 3) executed here INSTR(PC + 4) executed here Flash Data EEDATH EEDATL Register EERHLT INSTR (PC) INSTR (PC + 3) INSTR (PC + 4) |
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