DA6512.000

11 July, 2012

3 (26)

ABSOLUTE MAXIMUM RATINGS

All Voltages with Respect to Ground

Parameter

Symbol

Conditions

Min

Max

Unit

Supply Voltage

-0.3

5.0

V

Voltage Range for All Pins

-0.3

V

Latchup Current Limit

For all pins, test according to

JESD78A.

-100

+100

mA

Junction Temperature

+ 150

°C

Storage Temperature

Note 1

- 55

+125

°C

Note 1: See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce the wafer level trimming

and calibration data retention time.

Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum

operating conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions

for extended periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute

maximum ratings may be destructive to the devices.

Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD).

RECOMMENDED OPERATION CONDITIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Supply Voltage

Internal regulator disabled

Internal regulator enabled

1.8

1.9

2.7

2.7

3.6

3.6

V

Supply Voltage at EEPROM

Programming

T=+25°C. Note 1.

3.0

3.3

3.6

V

Operating Temperature

-40

+25

+85

°C

Note 1. The recommended condition for EEPROM programming is room temperature.

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Internal regulator voltage

VREG

Regulator enabled

1.8

V

Quiescent current

All inputs at VDD, no

load. Note 1.

0.1

µ

A

Conversion current

consumption

During conversion

390

µ

A

Average current

consumption

1 conversion/s

OSR=4096

OSR=2048

OSR=1024

OSR=512

OSR=256

28

14.1

7.1

3.7

1.9

µ

A

Conversion time

OSR=4096

OSR=2048

OSR=1024

OSR=512

OSR=256

82.6

41.6

21.1

10.9

5.8

ms

VDD rise time for proper

power on reset (POR)

Note 2.

400

ns

Internal system clock

oscillator frequency

OSCOUT

200

kHz

Sensor excitation

frequency

MCLK

No internal clock division

Internal clock division

50

25

kHz

Note 1. Setting XCS low activates the EEPROM memory regardless of the XSPI setting and the device consumes 20µA …30µA current. To

minimize current consumption XCS should be set low only during time periods when the device is used during SPI communication.

Note 2. Resetting the device using the XCLR pin is necessary in case the VDD rise time is longer than specified here.