CS1630/31

DS954F2

7

Notes:

in the VDD Supply Voltage section on page 6.

2. External circuitry should be designed to ensure that the ZCD current drawn from the internal clamp diode when it is forward biased

does not exceed specification.

3. Conductance is the inverse of resistance (1/

) and is expressed in siemens (S). A decrease in conductance is equivalent to an

increase in resistance.

4.

Specifications are guaranteed by design and are characterized and correlated using statistical process methods.

Second Stage Pulse Width Modulator

Minimum Switching Frequency

-625

-

Hz

Maximum Switching Frequency

-200

-

kHz

Second Stage Gate Driver

Output Source Resistance

-24

-



Output Sink Resistance

-11

-



Rise Time

(Note 5)

--

30

ns

Fall Time

(Note 5)

--

20

ns

Second Stage Protection

Overcurrent Protection (OCP)

-1.69

-

V

Overvoltage Protection (OVP)

-1.25

-

V

Open Loop Protection (OLP)

-200

-

mV

External Overtemperature Protection (eOTP)

Pull-up Current Source – Maximum

-80

-

A

Conductance Accuracy

(Note 3)

-

-

±5



Conductance Offset

(Note 3)

-

±250

-

nS

Current Source Voltage Threshold

-1.25

-

V

Internal Overtemperature Protection (iOTP)

Thermal Shutdown Threshold

(Note 4)

-135

-

ºC

Thermal Shutdown Hysteresis

(Note 4)

-14

-

ºC

Parameter

Condition

Symbol

Min

Typ

Max

Unit

GD OUT

GD

GND

VDD

Buffer

TP

+15V

-15V

0.25nF