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RF--35 数据表(PDF) 5 Page - Freescale Semiconductor, Inc

部件名 RF--35
功能描述  RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
PDF  20 Pages
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制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

RF--35 数据表(HTML) 5 Page - Freescale Semiconductor, Inc

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MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
47
56
--6
54
53
4
52
--2
0
2
P3dB = 51.28 dBm (134.3 W)
Actual
Ideal
VDD =50 Vdc,IDQ = 350 mA, f = 860 MHz
50
49
--4
P2dB = 51.06 dBm (127.6 W)
P1dB = 50.7 dBm (117.5 W)
55
51
48
--5
--3
--1
1
3
ηD
Gps
VDD =50 Vdc,IDQ = 350 mA, f = 860 MHz
50
10
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
30
Ciss
100
40
Coss
Measured with ±30 mV(rms)ac @ 1 MHz, VGS =0 Vdc
24
1
0
70
100
23
21
19
60
50
40
30
Pout, OUTPUT POWER (WATTS)
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power (Single--Ended
Narrowband Test Circuit)
22
20
17
200
20
Pin, INPUT POWER (dBm)
Figure 6. CW Output Power versus Input Power
(Single--Ended Narrowband Test Circuit)
16
25
10
23
21
Pout, OUTPUT POWER (WATTS)
Figure 7. CW Power Gain versus Output Power
(Single--Ended Narrowband Test Circuit)
20
130
150
Figure 8. CW Power Gain and Drain Efficiency
versus Output Power versus Temperature
(Single--Ended Narrowband Test Circuit)
Pout, OUTPUT POWER (WATTS)
18
25
1
22
24
23
100
200
IDQ = 350 mA, f = 860 MHz
18
50
70
90
110
VDD =40 V
50 V
25_C
TC =--30_C
85_C
Gps
19
21
20
VDD =50 Vdc,IDQ = 350 mA, f = 860 MHz
0
70
10
18
10
Crss
10
17
19
22
24
45 V
ηD
TC =--30_C
85_C
25_C
10
20
30
40
50
60
20
40
30
60
80
120
100
140



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