数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

RF--35 数据表(PDF) 2 Page - Freescale Semiconductor, Inc

部件名 RF--35
功能描述  RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
PDF  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

RF--35 数据表(HTML) 2 Page - Freescale Semiconductor, Inc

  RF--35 Datasheet HTML 1Page - Freescale Semiconductor, Inc RF--35 Datasheet HTML 2Page - Freescale Semiconductor, Inc RF--35 Datasheet HTML 3Page - Freescale Semiconductor, Inc RF--35 Datasheet HTML 4Page - Freescale Semiconductor, Inc RF--35 Datasheet HTML 5Page - Freescale Semiconductor, Inc RF--35 Datasheet HTML 6Page - Freescale Semiconductor, Inc RF--35 Datasheet HTML 7Page - Freescale Semiconductor, Inc RF--35 Datasheet HTML 8Page - Freescale Semiconductor, Inc RF--35 Datasheet HTML 9Page - Freescale Semiconductor, Inc Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 20 page
background image
2
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115)
B (201--400 V)
Charge Device Model (per JESD22--C101)
IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
0.5
μAdc
Drain--Source Breakdown Voltage
(ID =50 mA, VGS =0 Vdc)
V(BR)DSS
115
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
20
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS =10 Vdc, ID = 100 μAdc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS =10 Vdc, ID =0.25 Adc)
VDS(on)
0.2
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (2)
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
41
pF
Output Capacitance (2)
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
65.4
pF
Input Capacitance (2)
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
591
pF
Functional Tests (In Freescale Single--Ended Narrowband Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 350 mA, Pout =18 W Avg.,
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.0
22.0
24.0
dB
Drain Efficiency
ηD
27.5
28.5
%
Adjacent Channel Power Ratio
ACPR
--62.0
--60.0
dBc
Input Return Loss
IRL
--14
--9
dB
1. Each side of device measured separately.
2. Part internally input matched.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com