RF--35 datasheet(1/20 Pages) FREESCALE

部件名	RF--35

功能描述	RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

PDF	20 Pages

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制造商	FREESCALE [Freescale Semiconductor, Inc]

网页	http://www.freescale.com

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1 / 20 page

MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

Enhancement--Mode Lateral MOSFETs

Designed for commercial and industrial broadband applications with

frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

applications.

• Typical Performance (Broadband Reference Circuit): VDD =50 Volts,

IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability

on CCDF.

Signal Type

Pout

(W)

f

(MHz)

Gps

(dB)

ηD

(%)

Output

Signal PAR

(dB)

IMD

Shoulder

(dBc)

DVB--T (8k OFDM)

18 Avg.

470

21.8

31.0

7.9

--27.8

650

21.6

26.4

8.4

--37.6

860

21.7

27.6

7.1

--30.4

Features

• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,

90 Watts CW Output Power

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Input Matched for Ease of Use

• Qualified Up to a Maximum of 50 VDD Operation

• Excellent Thermal Stability

• Device can be used Single--Ended or in a Push--Pull Configuration

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• 225°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +115

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

--65 to +150

°C

Case Operating Temperature

TC

150

°C

Operating Junction Temperature (1,2)

TJ

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 76°C, 18 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz

Case Temperature 80°C, 90 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz

RθJC

0.79

0.82

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF6VP3091N

Rev. 1, 12/2011

Freescale Semiconductor

Technical Data

(Top View)

470--860 MHz, 90 W, 50 V

BROADBAND

RF POWER LDMOS TRANSISTORS

PARTS ARE PUSH--PULL

Drain 1

Figure 1. Pin Connections

Drain 2

Gate 1

Gate 2

Note: Exposed backside of the package is

the source terminal for the transistor.

CASE 1484--04, STYLE 1

TO--272 WB--4

PLASTIC

MRF6VP3091NBR1(NBR5)

CASE 1486--03, STYLE 1

TO--270 WB--4

PLASTIC

MRF6VP3091NR1(NR5)

MRF6VP3091NR1

MRF6VP3091NR5

MRF6VP3091NBR1

MRF6VP3091NBR5

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