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AD8606ARM-R2 数据表(PDF) 15 Page - Analog Devices |
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AD8606ARM-R2 数据表(HTML) 15 Page - Analog Devices |
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15 / 20 page ![]() AD8605/AD8606/AD8608 Rev. D | Page 15 of 20 RS CS RL CL V+ V– 4 2 3 8 1 AD8605 VIN 200mV Figure 48. Snubber Network Configuration TIME (10 µs/DIV) VS = ±2.5V AV = 1 RL = 10kΩ RS = 90Ω CL = 1,000pF CS = 700pF Figure 49. Capacitive Load Drive with Snubber Table 5 summarizes a few optimum values for capacitive loads. Table 5. CL (pF) RS (Ω) CS (pF) 500 100 1,000 1,000 70 1,000 2,000 60 800 An alternate technique is to insert a series resistor inside the feedback loop at the output of the amplifier. Typically, the value of this resistor is approximately 100 Ω. This method also reduces overshoot and ringing but causes a reduction in the maximum output swing. LIGHT SENSITIVITY The AD8605ACB (MicroCSP package option) is essentially a silicon die with additional post fabrication dielectric and intermetallic processing designed to contact solder bumps on the active side of the chip. With this package type, the die is exposed to ambient light and is subject to photoelectric effects. Light sensitivity analysis of the AD8605ACB mounted on standard PCB material reveals that only the input bias current (IB) parameter is impacted when the package is illuminated directly by high intensity light. No degradation in electrical performance is observed due to illumination by low intensity (0.1 mW/cm2) ambient light. Figure 50 shows that IB increases with increasing wavelength and intensity of incident light; IB can reach levels as high as 4500 pA at a light intensity of 3 mW/cm2 and a wavelength of 850 nm. The light intensities shown in Figure 50 are not normal for most applications, i.e., even though direct sunlight can have intensities of 50 mW/cm2, office ambient light can be as low as 0.1 mW/cm2. When the MicroCSP package is assembled on the board with the bump-side of the die facing the PCB, reflected light from the PCB surface is incident on active silicon circuit areas and results in the increased IB. No performance degradation occurs due to illumination of the backside (substrate) of the AD8605ACB. The AD8605ACB is particularly sensitive to incident light with wavelengths in the near infrared range (NIR, 700 nm to 1000 nm). Photons in this waveband have a longer wavelength and lower energy than photons in the visible (400 nm to 700 nm) and near ultraviolet bands (NUV, 200 nm to 400 nm); therefore, they can penetrate more deeply into the active silicon. Incident light with wavelengths greater than 1100 nm has no photo- electric effect on the AD8605ACB because silicon is trans- parent to wave lengths in this range. The spectral content of conventional light sources varies: sunlight has a broad spectral range, with peak intensity in the visible band that falls off in the NUV and NIR bands; fluorescent lamps have significant peaks in the visible but not in the NUV or NIR bands. Efforts have been made at a product level to reduce the effect of ambient light; the under bump metal (UBM) has been designed to shield the sensitive circuit areas on the active side (bump-side) of the die. However, if an application encounters any light sensitivity with the AD8605ACB, shielding the bump side of the MicroCSP package with opaque material should eliminate this effect. Shielding can be accomplished using materials such as silica filled liquid epoxies that are used in flip chip underfill techniques. WAVELENGTH (nm) 3500 0 350 2500 3000 2000 500 1000 1500 450 550 650 750 850 1mW/cm2 4000 4500 5000 3mW/cm2 2mW/cm2 Figure 50. AD8605ACB Input Bias Current Response to Direct Illumination of Varying Intensity and Wavelength MICROCSP ASSEMBLY CONSIDERATIONS For detailed information on MicroCSP PCB assembly and reliability, refer to ADI Application Note AN-617 on the ADI website www.analog.com. |
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