REV. C

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a

Low Noise, Matched

Dual Monolithic Transistor

MAT02

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 617/329-4700

Fax: 617/326-8703

FEATURES

Low Offset Voltage: 50

V max

Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/

√Hz max

A

0.3

Low Offset Voltage Drift: 0.1

V/ C max

Improved Direct Replacement for LM194/394

Available in Die Form

ORDERING GUIDE

1

Temperature

Package

Model

Range

Option

MAT02AH

2

50

µV

–55

°C to +125°C TO-78

MAT02EH

50

µV

–55

°C to +125°C TO-78

MAT02FH

150

µV

–55

°C to +125°C TO-78

NOTES

TO-can packages.

number. Consult factory for 883 data sheet.

ABSOLUTE MAXIMUM RATINGS

1

Total Power Dissipation

Case Temperature

Ambient Temperature

Operating Temperature Range

MAT02A . . . . . . . . . . . . . . . . . . . . . . . . . . –55

°C to +125°C

MAT02E, F . . . . . . . . . . . . . . . . . . . . . . . . . –25

°C to +85°C

Operating Junction Temperature . . . . . . . . . . –55

°C to +150°C

Storage Temperature . . . . . . . . . . . . . . . . . . . –65

°C to +150°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300

°C

Junction Temperature . . . . . . . . . . . . . . . . . . –65

°C to +150°C

NOTES

Derate linearly at 16.4 mW/

°C for case temperature above 40°C.

Derate linearly at 6.3 mW/

°C for ambient temperature above 70°C.

NOTE

Substrate is connected to case on TO-78 package. Sub-

strate is normally connected to the most negative circuit

potential, but can be floated.

PIN CONNECTION

TO-78

(H Suffix)

PRODUCT DESCRIPTION

The design of the MAT02 series of NPN dual monolithic tran-

Precision Monolithics’ exclusive Silicon Nitride “Triple-

Passivation” process stabilizes the critical device parameters

over wide ranges of temperature and elapsed time. Also, the high

range of collector current. Exceptional characteristics of the

MAT02 include offset voltage of 50

µV max (A/E grades) and

150

µV max F grade. Device performance is specified over the

full military temperature range as well as at 25

°C.

Input protection diodes are provided across the emitter-base

junctions to prevent degradation of the device characteristics

due to reverse-biased emitter current. The substrate is clamped

to the most negative emitter by the parasitic isolation junction

created by the protection diodes. This results in complete isola-

tion between the transistors.

The MAT02 should be used in any application where low noise

is a priority. The MAT02 can be used as an input stage to make

an amplifier with noise voltage of less than 1.0 nV/

√Hz at 100 Hz.

Other applications, such as log/antilog circuits, may use the ex-

cellent logging conformity of the MAT02. Typical bulk resis-

tance is only 0.3

Ω to 0.4 Ω. The MAT02 electrical charac-

teristics approach those of an ideal transistor when operated over

a collector current range of 1

µA to 10 mA. For applications re-

quiring multiple devices see MAT04 Quad Matched Transistor

data sheet.