MAT02

–4–

REV. C

MAT02N

Parameter

Symbol

Conditions

Limits

Units

Average Offset

10

µA ≤ I

C

≤ 1 mA

0.08

µV/°C

Voltage Drift

0

≤ V

Average Offset

µA

40

pA/

°C

Current Drift

Gain-Bandwidth

200

MHz

Product

∆I

∆V

CB

0

≤ V

CB

≤ 40 V

70

pA/V

MAT02N

Parameter

Symbol

Conditions

Limits

Units

Breakdown Voltage

40

V min

Offset Voltage

10

µA ≤ I

1

150

µV max

Input Offset Current

1.2

nA max

Input Bias Current

34

nA max

Current Gain

400

min

µA, V

300

Current Gain Match

∆h

FE

10

µA ≤ I

C

≤ 1 mA, V

4

% max

Offset Voltage

∆V

0 V

≤ V

50

µV max

10

µA ≤ I

C

Offset Voltage Change

∆V

∆I

C

50

µV max

vs. Collector Current

10

µA ≤ I

1

Bulk Resistance

100

µA ≤ I

C

≤ 10 mA

0.5

Ω max

Collector Saturation Voltage

0.2

V max

NOTES

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

WARNING!

ESD SENSITIVE DEVICE

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the MAT02 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

A, unless otherwise noted.)

TYPICAL ELECTRICAL CHARACTERISTICS

Die Size 0.061

× 0.057 inch, 3,477 sq. mils

(1.549

× 1.448 mm, 224 sq. mm)

1. COLLECTOR (1)

2. BASE (1)

3. EMITTER (1)

4. COLLECTOR (2)

5. BASE (2)

6. EMITTER (2)

7. SUBSTRATE

DICE CHARACTERISTICS