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STP210N75F6 数据表(PDF) 6 Page - STMicroelectronics

部件名 STP210N75F6
功能描述  N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET™VI DeepGATE??Power MOSFET
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP210N75F6 数据表(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STP210N75F6
6/13
Doc ID 018507 Rev 1
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
Static drain-source on resistance
ID
100
10
1
0.1
0.1
1
VDS(V)
10
(A)
Oper
ation
in
thi
s a
re
a i
s
Limited
by
m
ax
R
DS
(on)
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Single pulse
AM09029v1
10
-5
10
-4
10
-3
10
-2
10
-1
tp(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/τ
tp
τ
Single pulse
δ=0.5
280tok
ID
150
100
50
0
0
4
VDS(V)
8
(A)
2
6
200
250
5V
4V
VGS=10V
300
350
AM09030v1
ID
150
100
50
0
0
4
VGS(V)
8
(A)
2
6
200
250
300
350
VDS=2V
AM09031v1
BVDSS
-75
TJ(°C)
(norm)
-25
75
25
125
0.85
0.90
0.95
1.00
1.05
1.10
175
1.15
ID=250µA
AM09032v1
RDS(on)
3.0
2.8
2.6
2.4
40
ID(A)
(
Ω)
20
60
3.2
3.4
3.6
3.8
VGS=10V
100
80
120
AM09033v1



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