STP210N75F6 datasheet(4/13 Pages) STMICROELECTRONICS

部件名	STP210N75F6

功能描述	N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET™VI DeepGATE??Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 13 page

Electrical characteristics

STP210N75F6

4/13

Doc ID 018507 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = max rating

µA

VDS = max rating,TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 60 A

3.0

3.7

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

11800

Coss

Output capacitance

1060

Crss

Reverse transfer

capacitance

394

Total gate charge

VDD = 37.5 V, ID = 120 A,

VGS = 10 V

(see Figure 14)

171

Qgs

Gate-source charge

Qgd

Gate-drain charge

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