STP210N75F6 datasheet(5/13 Pages) STMICROELECTRONICS

部件名	STP210N75F6

功能描述	N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET™VI DeepGATE??Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 13 page

STP210N75F6

Electrical characteristics

Doc ID 018507 Rev 1

5/13

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 40 V, ID = 60 A

RG =4.7 Ω VGS = 10 V

(see Figure 13)

td(off)

Turn-off-delay time

Fall time

154

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

Source-drain current

120

ISDM

(1)

Current limited by package.

Source-drain current (pulsed)

480

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 120 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 120 A, VDD = 60 V

di/dt = 100 A/µs,

Tj = 150 °C

(see Figure 15)

144

4.8

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