MMDF2C03HD

4

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

0.4

0.5

0.6

0.3

0.1

0.2

0

2

3

4

5

8

6

7

9

10

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID = 1.5 A

TJ = 25°C

0.05

ID, DRAIN CURRENT (AMPS)

0.08

0

0.5

1

2.5

3

0.06

0.07

1.5

2

10 V

VGS = 4.5

TJ = 25°C

TJ, JUNCTION TEMPERATURE (°C)

– 50

0

50

100

150

0

0.5

1.0

1.5

2.0

VGS = 10 V

ID = 1.5 A

125

75

25

– 25

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

0

0.5

1

1.5

2

4

0.10

0.15

0.20

0.25

0.30

TJ = 25°C

VGS = 4.5 V

2.5

3

3.5

10 V

0

1

2

3

4

10

0

0.1

0.3

0.4

0.6

ID = 1 A

TJ = 25°C

0.2

5

6

7

8

9

0.5

TJ, JUNCTION TEMPERATURE (°C)

– 50

0

50

100

150

0.6

VGS = 10 V

ID = 2 A

1.4

– 25

25

75

125

0.8

1.6

1.2

1.0