MMDF2C03HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

—

30

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

IDSS

(N)

(P)

—

—

—

—

1.0

1.0

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

—

100

nAdc

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

(N)

(P)

1.0

1.0

1.7

1.5

3.0

2.0

Vdc

Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 10 Vdc, ID = 2.0 Adc)

RDS(on)

(N)

(P)

—

—

0.06

0.17

0.070

0.200

Ohm

Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 1.5 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

(N)

(P)

—

—

0.065

0.225

0.075

0.300

Ohm

Forward Transconductance

(VDS = 3.0 Vdc, ID = 1.5 Adc)

(VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

(N)

(P)

2.0

2.0

3.6

3.4

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 24 Vdc, VGS = 0

Vdc,

f = 1.0 MHz)

Ciss

(N)

(P)

—

—

450

397

630

550

pF

Output Capacitance

(VDS = 24 Vdc, VGS = 0

Vdc,

f = 1.0 MHz)

Coss

(N)

(P)

—

—

160

189

225

250

Transfer Capacitance

f = 1.0 MHz)

Crss

(N)

(P)

—

—

35

64

70

126

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

(VDD = 15 Vdc, ID = 3.0

Adc,

td(on)

(N)

(P)

—

—

12

16

24

32

ns

Rise Time

Adc,

VGS = 4.5 Vdc,

RG = 9.1 Ω)

(VDD = 15 Vdc, ID = 2.0

Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tr

(N)

(P)

—

—

65

18

130

36

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 2.0

Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

(N)

(P)

—

—

16

63

32

126

Fall Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tf

(N)

(P)

—

—

19

194

38

390

Turn–On Delay Time

(VDD = 15 Vdc, ID = 3.0

Adc,

td(on)

(N)

(P)

—

—

8.0

9.0

16

18

Rise Time

Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

(VDD = 15 Vdc, ID = 2.0

Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

tr

(N)

(P)

—

—

15

10

30

20

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 2.0

Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

(N)

(P)

—

—

30

81

60

162

Fall Time

VGS = 10 Vdc,

RG = 6.0 Ω)

tf

(N)

(P)

—

—

23

192

46

384

Total Gate Charge

(VDS = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

(VDS = 24 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

QT

(N)

(P)

—

—

11.5

14.2

16

19

nC

Gate–Source Charge

(VDS = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

(VDS = 24 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q1

(N)

(P)

—

—

1.5

1.1

—

—

Gate–Drain Charge

(VDS = 24 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q2

(N)

(P)

—

—

3.5

4.5

—

—

VGS = 10 Vdc)

Q3

(N)

(P)

—

—

2.8

3.5

—

—

(1) Negative signs for P–Channel device omitted for clarity.

(continued)

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.