MMDF2C03HD

3

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage(2)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

(N)

(P)

—

—

0.82

1.82

1.2

2.0

Vdc

Reverse Recovery Time

(IF = IS,

dIS/dt = 100 A/µs)

trr

(N)

(P)

—

—

24

42

—

—

ns

(IF = IS,

dIS/dt = 100 A/µs)

ta

(N)

(P)

—

—

17

16

—

—

(IF = IS,

dIS/dt = 100 A/µs)

tb

(N)

(P)

—

—

7.0

26

—

—

Reverse Recovery Storage Charge

QRR

(N)

(P)

—

—

0.025

0.043

—

—

µC

(1) Negative signs for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

3.9 V

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

0

0.4

0.8

1.2

1.6

2

0

1

3

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

4

2

TJ = 25°C

2.7 V

0.2

0.6

1.8

1.4

1

5

6

2.5 V

2.9 V

3.1 V

3.3 V

3.5 V

3.7 V

4.5 V

4.3 V

3.9 V

4.1 V

VGS = 10 V

0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

VDS ≥ 10 V

25

°C

2

4

6

5

1

2

2.5

3

3.5

4

3

0

0.2

0.4

0.6

0.8

2

0

2

3

4

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

TJ = 25°C

VGS = 10 V

1

1.2

2.7 V

2.5 V

1

1.4

1.6

1.8

1.5

1.7

1.9

2.1

2.3

3.7

0

2

3

4

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

VDS ≥ 10 V

TJ = 100°C

25

°C

– 55

°C

2.5

1

2.7

2.9

3.1

3.3

3.5

TJ = 100°C

– 55

°C

2.9 V

3.1 V

3.3 V

3.5 V

3.7 V

4.5 V