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MCP6421 数据表(PDF) 20 Page - Microchip Technology |
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MCP6421 数据表(HTML) 20 Page - Microchip Technology |
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20 / 34 page ![]() MCP6421 DS25165A-page 20 2013 Microchip Technology Inc. 4.7.2 PRESSURE SENSOR AMPLIFIER The MCP6421 op amp is well suited for conditioning sensor signals in battery-powered applications. Many sensors are configured as Wheatstone bridges. Strain gauges and pressure sensors are two common exam- ples. Figure 4-8 shows a strain gauge amplifier, using the MCP6421 Enhanced EMI protection device. The difference amplifier with EMI robustness op amp is used to amplify the signal from the Wheatstone bridge. The two op amps, configured as buffers and connected at outputs of pressure sensors, prevents resistive loading of the bridge by resistor R1 and R2. Resistors R1,R2 and R3,R5 need to be chosen with very low tolerance to match the CMRR. FIGURE 4-8: Pressure Sensor Amplifier. 4.7.3 BATTERY CURRENT SENSING The MCP6421 op amp’s Common Mode Input Range, which goes 0.3V beyond both supply rails, supports their use in high-side and low-side battery current sensing applications. The low quiescent current helps prolong battery life, and the rail-to-rail output supports detection of low currents. Figure 4-9 shows a high side battery current sensor circuit. The 10 resistor is sized to minimize power losses. The battery current (IDD) through the 10 resistor causes its top terminal to be more negative than the bottom terminal. This keeps the Common mode input voltage of the op amp below VDD, which is within its allowed range. The output of the op amp will also be below VDD, within its Maximum Output Voltage Swing specification. FIGURE 4-9: Battery Current Sensing. VDD R2 + - VOUT MCP6421 R1 R3 100k R5 100k 1k 1k R-¨R R+¨R Va Vb VDD + - VDD + - MCP6421 MCP6421 R+¨R R-¨R VDD Strain Gauge V OUT V a V b – 10k 100 ------------- = VDD IDD 100 k 1M 1.8V VOUT High-Side Battery Current Sensor 10 to 5.5V I DD V DD V OUT – 10 V/V 10 ------------------------------------------ = MCP6421 VDD VSS |
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