P0109DA5AL3 datasheet(2/11 Pages) STMICROELECTRONICS

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Characteristics

P010xx

2/11

Characteristics

Table 2.

Absolute ratings (limiting values) P010xxA and P010xxN

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (180° conduction angle)

TO-92

Tl = 55 °C

0.8

SOT-223

Tamb = 70 °C

IT(AV)

Average on-state current (180° conduction angle)

TO-92

Tl = 55 °C

0.5

SOT-223

Tamb = 70 °C

ITSM

Non repetitive surge peak on-state current

tp = 8.3 ms

Tj = 25 °C

tp = 10 ms

I²tI²t Value for fusing

tp = 10 ms

Tj = 25 °C

0.24

A2S

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 60 Hz

Tj = 125 °C

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.1

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 3.

Absolute ratings (limiting values) P010xxL

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (180° conduction angle)

Tamb = 36 °C

0.25

IT(AV)

Average on-state current (180° conduction angle)

Tamb = 36 °C

0.16

ITSM

Non repetitive surge peak on-state current

tp = 8.3 ms

Tj = 25 °C

tp = 10 ms

I²tI²t Value for fusing

tp = 10 ms

Tj = 25 °C

0.18

A2S

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 60 Hz

Tj = 125 °C

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

0.5

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.02

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

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