P0109DA5AL3 datasheet(5/11 Pages) STMICROELECTRONICS

5 / 11 page

P010xx

Characteristics

5/11

Figure 5.

Average and DC on-state current

vs. case temperature P010xxL

Figure 6.

Relative variation of thermal

impedance junction to ambient

vs. pulse duration

100

125

0.00

0.05

0.10

0.15

0.20

0.25

0.30

(A)

T(AV)

(°C)

case

α = 180°

D.C.

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

K=[Z

th(j-a)

th(j-a)]

t (s)

SOT-223

TO-92

SOT23-3L

Figure 7.

Relative variation of gate trigger,

holding, and latching currents

vs. junction temperature

Figure 8.

Relative variation of holding

current vs. gate-cathode resistance

-40

-20

100

120

140

T (°C)

I,I ,I [T ] /

GT H L

,I ,I [T =25°C]

GT H L

IGT

IH & I

= 1k

Typical values

1E-2

1E-1

1E+0

1E+1

R(k )

I [R

] / I [

=1k ]

HGK

RGK

Tj = 25°C

Typical values

Figure 9.

Relative variation of dV/dt immunity

vs. gate-cathode resistance

Figure 10.

Relative variation of dV/dt immunity

vs. gate-cathode capacitance

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

R(k )

dV/dt[R

] / dV/dt[

=1k ]

RGK

Tj = 125°C

V = 0.67 x V

DRM

Typical values

0123

4567

(nF)

dV/dt[C

] / dV/dt[

=1k ]

RGK

V = 0.67 x V

= 125°C

= 1k

DRM

Typical values

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