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IRSM836-024MATR 数据表(PDF) 3 Page - International Rectifier

部件名 IRSM836-024MATR
功能描述  Integrated Power Module for Small Appliance Motor Drive Applications
PDF  19 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRSM836-024MATR 数据表(HTML) 3 Page - International Rectifier

  IRSM836-024MATR Datasheet HTML 1Page - International Rectifier IRSM836-024MATR Datasheet HTML 2Page - International Rectifier IRSM836-024MATR Datasheet HTML 3Page - International Rectifier IRSM836-024MATR Datasheet HTML 4Page - International Rectifier IRSM836-024MATR Datasheet HTML 5Page - International Rectifier IRSM836-024MATR Datasheet HTML 6Page - International Rectifier IRSM836-024MATR Datasheet HTML 7Page - International Rectifier IRSM836-024MATR Datasheet HTML 8Page - International Rectifier IRSM836-024MATR Datasheet HTML 9Page - International Rectifier Next Button
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IRSM836-024MA
3
www.irf.com
© 2013 International Rectifier
February 3, 2013
Recommended Operating Conditions
Symbol
Description
Min
Max
Unit
V+
Positive DC Bus Input Voltage
---
200
V
VS1,2,3
High Side Floating Supply Offset Voltage
(Note 3)
200
V
VB1,2,3
High Side Floating Supply Voltage
VS+12
VS+20
V
VCC
Low Side and Logic Supply Voltage
13.5
16.5
V
VIN
Input Voltage of LIN, HIN, ITRIP, EN, FLT
0
5
V
Fp
PWM Carrier Frequency
---
20
kHz
The Input/Output logic diagram is shown in Figure 1. For proper operation the module should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V
differential.
Note 3: Logic operational for Vs from COM-5V to COM+250V. Logic state held for Vs from COM-5V to COM-VBS.
Static Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TA = 25
oC unless otherwise specified. The V
IN and IIN parameters are referenced to VSS and are
applicable to all six channels. The V
CCUV parameters are referenced to VSS. The VBSUV parameters are referenced to VS.
Symbol
Description
Min
Typ
Max
Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
250
---
---
V
TJ=25°C, ILK=250µA
ILKH
Leakage Current of High Side FET’s in
Parallel
10
µA
TJ=25°C, VDS=250V
ILKL
Leakage Current of Low Side FET’s in
Parallel Plus Gate Drive IC
15
µA
TJ=25°C, VDS=250V
RDS(ON)
Drain to Source ON Resistance
---
2.0
2.4
Ω
TJ=25°C, VCC=15V, ID=1A
VIN,th+
Positive Going Input Threshold
2.5
---
---
V
VIN,th-
Negative Going Input Threshold
---
---
0.8
V
VCCUV+,
VBSUV+
VCC and VBS Supply Under-Voltage,
Positive Going Threshold
8
8.9
9.8
V
VCCUV-,
VBSUV-
VCC and VBS supply Under-Voltage,
Negative Going Threshold
7.4
8.2
9
V
VCCUVH,
VBSUVH
VCC and VBS Supply Under-Voltage
Lock-Out Hysteresis
---
0.6
---
V
IQBS
Quiescent VBS Supply Current VIN=0V
---
---
125
µA
IQCC
Quiescent VCC Supply Current VIN=0V
---
---
3
mA
IQCC, ON
Quiescent VCC Supply Current VIN=4V
---
---
10
mA
IIN+
Input Bias Current VIN=4V
---
100
160
µA
IIN-
Input Bias Current VIN=0V
---
--
1
µA
ITRIP+
ITRIP Bias Current VITRIP=4V
---
5
40
µA
ITRIP-
ITRIP Bias Current VITRIP=0V
---
--
1
µA
VIT, TH+
ITRIP Threshold Voltage
0.37
0.47
0.55
V
VIT, TH-
ITRIP Threshold Voltage
---
0.4
---
V



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