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IRSM836-024MATR 数据表(PDF) 4 Page - International Rectifier

部件名 IRSM836-024MATR
功能描述  Integrated Power Module for Small Appliance Motor Drive Applications
PDF  19 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRSM836-024MATR 数据表(HTML) 4 Page - International Rectifier

  IRSM836-024MATR Datasheet HTML 1Page - International Rectifier IRSM836-024MATR Datasheet HTML 2Page - International Rectifier IRSM836-024MATR Datasheet HTML 3Page - International Rectifier IRSM836-024MATR Datasheet HTML 4Page - International Rectifier IRSM836-024MATR Datasheet HTML 5Page - International Rectifier IRSM836-024MATR Datasheet HTML 6Page - International Rectifier IRSM836-024MATR Datasheet HTML 7Page - International Rectifier IRSM836-024MATR Datasheet HTML 8Page - International Rectifier IRSM836-024MATR Datasheet HTML 9Page - International Rectifier Next Button
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IRSM836-024MA
4
www.irf.com
© 2013 International Rectifier
February 3, 2013
VIT, HYS
ITRIP Input Hysteresis
---
0.07
---
V
RBR
Internal Bootstrap Equivalent Resistor
Value
---
200
---
Ω
TJ=25°C
VRCIN,TH
RCIN Positive Going Threshold
---
8
---
V
RON,FAUL
T
FAULT Open-Drain Resistance
---
40
100
Ω
Note4: Not tested at manufacturing
Dynamic Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TA = 25
oC unless otherwise specified.
Symbol
Description
Min
Typ
Max
Units
Conditions
TON
Input to Output Propagation Turn-On
Delay Time
---
0.6
1.5
µs
ID=1mA, V
+=50V
See Fig.2
TOFF
Input to Output Propagation Turn-Off
Delay Time
---
0.8
1.5
µs
TFIL,IN
Input Filter Time (HIN, LIN)
200
330
---
ns
VIN=0 & VIN=4V
TFIL,EN
Input Filter Time (EN)
90
220
---
ns
VIN=0 & VIN=4V
TBLT-ITRIP
ITRIP Blanking Time
190
330
ns
VIN=0 & VIN=4V, VI/Trip=5V
TFAULT
Itrip to Fault
---
600
1000
ns
VIN=0 & VIN=4V
TEN
EN Falling to Switch Turn-Off
700
1000
ns
VIN=0 & VIN=4V
TITRIP
ITRIP to Switch Turn-Off Propagation
Delay
---
900
1300
ns
ID=1A, V
+=50V, See Fig. 3
MOSFET Avalanche Characteristics
Symbol
Description
Min
Typ
Max
Units
Conditions
EAS
Single Pulse Avalanche Energy
---
20
---
mJ
TJ=25°C, L=3mH, VDD=100V,
IAS=3.7A, TO-220 package
Thermal and Mechanical Characteristics
Symbol
Description
Min
Typ
Max
Units
Conditions
Rth(J-CT)
Total Thermal Resistance Junction to
Case Top
---
23.6
---
°C/W
One device
Rth(J-CB)
Total Thermal Resistance Junction to
Case Bottom
---
3.7
---
°C/W
One device



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