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ADP1655ACBZ-R7 数据表(PDF) 3 Page - Analog Devices

部件名 ADP1655ACBZ-R7
功能描述  Dual LED Flash Driver with I2C-Compatible Interface
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP1655ACBZ-R7 数据表(HTML) 3 Page - Analog Devices

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ADP1655
Rev. 0 | Page 3 of 24
SPECIFICATIONS
VIN = 3.6 V, TJ = −40°C to +125°C for minimum/maximum specifications and TA = 25°C for typical specifications, unless
otherwise noted.
Table 1.
Parameter1
Conditions
Min
Typ
Max
Unit
SUPPLY
Input Voltage Range
2.7
5.5
V
Undervoltage Lockout Threshold
VIN falling
2.3
2.4
2.5
V
Hysteresis
50
100
150
mV
Shutdown Current
TJ = −40°C to +85°C, current into VIN pin, VIN = 2.7
V to 4.5 V
0.3
1
μA
Standby Current
TJ = −40°C to +85°C, current into VIN pin, VIN = 2.7
V to 4.5 V
3
10
μA
I2C/EN = SCL/EN1 = SDA/EN2 = 1.8 V
Operating Quiescent Current
Torch mode, two LEDs, LED current = 40 mA
5.3
mA
SW Switch Leakage
TJ = −40°C to +85°C
1
μA
INPUTS
Input Logic Low Voltage
0.54
V
Input Logic High Voltage
1.26
V
TORCH, STROBE, TX_MASK Pull-Down
350
kΩ
SCL/EN1, SDA/EN2 Pull-Down
I2C/EN = 0 V
350
kΩ
TORCH Glitch Filtering Delay
From TORCH rising edge to device start
6.3
9
11.7
ms
LED DRIVER
LED Current
Assist Light, Torch
I2C/EN = 0, one LED
80
mA
I2C/EN = 0, two LEDs
40
mA
I2C/EN = 1, assist light value setting = 0 (000 binary)
20
mA
I2C/EN = 1, assist light value setting = 7 (111 binary)
160
mA
Flash
I2C/EN = 0, one LED
500
mA
I2C/EN = 0, two LEDs
320
mA
I2C/EN = 1, flash value setting = 0 (0000 binary)
200
mA
I2C/EN = 1, one LED, flash value setting = 15 (1111 binary)
500
mA
I2C/EN = 1, two LEDs, flash value setting = 10 to 15 (1010 to
1111 binary)
400
mA
LED Current Accuracy
ILED = 320 mA to 500 mA
−5
+5
%
ILED = 60 mA to 320 mA
−5
+10
%
ILED = 20 mA to 60 mA
−5
+20
%
LED Current Source Headroom2
Flash typical, 400 mA LED current
290
mV
Torch 160 mA
190
LED_OUT Ramp-Up Time
1
ms
LED_OUT Ramp-Down Time
0.5
ms
Maximum Timeout For Flash
850
ms
Timer Accuracy
−7.5
+7.5
%
SWITCHING REGULATOR
Switching Frequency
1.85
2
2.15
MHz
Minimum Duty Cycle
9.0
%
N-FET Resistance
135
mΩ
P-FET Resistance
290
mΩ



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