DAC8512FSZ datasheet(3/20 Pages) AD

3 / 20 page

REV. A

–3–

DAC8512

WAFER TEST LIMITS (@ V

DD = +5.0 V

5%, TA = +25 C, applies to part number DAC8512GBC only, unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Units

STATIC PERFORMANCE

Relative Accuracy

INL

–2

±3/4

LSB

Differential Nonlinearity

DNL

No Missing Codes

–1

±0.7

LSB

Zero-Scale Error

VZSE

Data = 000H

+1/2

LSB

Full-Scale Voltage

VFS

Data = FFFH

4.085

4.095

4.105

LOGIC INPUTS

Logic Input Low Voltage

VIL

0.8

Logic Input High Voltage

VIH

2.4

Input Leakage Current

IIL

µA

SUPPLY CHARACTERISTICS

Positive Supply Current

IDD

VIH = 2.4 V, VIL= 0.8 V, No Load

1.5

2.5

VDD = 5 V, VIL = 0 V, No Load

0.5

Power Dissipation

PDISS

VIH = 2.4 V, VIL = 0.8 V, No Load

7.5

12.5

VDD = 5 V, VIL = 0 V, No Load

2.5

Power Supply Sensitivity

PSS

∆V

DD =

±5%

0.002

0.004

%/%

NOTE

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ABSOLUTE MAXIMUM RATINGS*

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +10 V

Logic Inputs to GND . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V

VOUT to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V

IOUT Short Circuit to GND . . . . . . . . . . . . . . . . . . . . . . 50 mA

Package Power Dissipation . . . . . . . . . . . . . . (TJ max – TA)/

Thermal Resistance

8-Pin Plastic DIP Package (P) . . . . . . . . . . . . . . . . 103

°C/W

8-Lead SOIC Package (S) . . . . . . . . . . . . . . . . . . . 158

°C/W

Maximum Junction Temperature (TJ max) . . . . . . . . . +150

°C

Operating Temperature Range . . . . . . . . . . . . . –40

°C to +85°C

Storage Temperature Range . . . . . . . . . . . . . –65

°C to +150°C

Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300

°C

*Stresses above those listed under “Absolute Maximum Ratings” may cause

permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability .

WARNING!

ESD SENSITIVE DEVICE

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the DAC8512 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

ORDERING GUIDE

INL

Temperature

Package

Model

(LSB) Range

Description

Option

DAC8512EP

±1

–40

°C to +85°C 8-Pin P-DIP N-8

DAC8512FP

±2

–40

°C to +85°C 8-Pin P-DIP N-8

DAC8512FS

±2

–40

°C to +85°C 8-Lead SOIC SO-8

DAC8512GBC

±2

+25

°C

Dice

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